Experiments conducted by scientists at the Novosibirsk-based Rzhanov Institute of Semiconductor Physics show that new multilayer graphene based flash memory can offer much higher IPS (instructions per second) and data storage time values than in analogs based on other materials, portal Science in Siberia reported recently.
According to Yuri Novikov, PhD, a senior research fellow at the Institute, the new flash memory is built on a technology of injecting and storing an electrical charge in a data-retaining medium, which is multilayer graphene. Other components of the memory include tunnel and barrier layers; the former is made of silicon oxide while the latter is made of a dielectric material with a high value of permittivity.
Siberians use multilayer graphene in next gen flash memoryRead More
